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FFSH20120A-F155
Silicon Carbide Schottky Diode, EliteSiC, Single, 1.2 kV, 20 A, 120 nC, TO-247
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346 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY77.220 (CNY87.2586) |
| 5+ | CNY69.890 (CNY78.9757) |
| 10+ | CNY62.750 (CNY70.9075) |
Price for:Each
Minimum: 1
Multiple: 1
CNY77.22 (CNY87.26 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFFSH20120A-F155
Order Code4036806
Technical Datasheet
Product Range-
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage1.2kV
Average Forward Current20A
Total Capacitive Charge120nC
Diode Case StyleTO-247
No. of Pins2 Pin
Operating Temperature Max175°C
Diode MountingThrough Hole
Qualification-
Technical Specifications
Product Range
-
Repetitive Peak Reverse Voltage
1.2kV
Total Capacitive Charge
120nC
No. of Pins
2 Pin
Diode Mounting
Through Hole
Diode Configuration
Single
Average Forward Current
20A
Diode Case Style
TO-247
Operating Temperature Max
175°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.007062