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Quantity | Price (inc GST) |
---|---|
1+ | CNY52.370 (CNY59.1781) |
10+ | CNY30.410 (CNY34.3633) |
100+ | CNY25.490 (CNY28.8037) |
500+ | CNY24.920 (CNY28.1596) |
1000+ | CNY24.350 (CNY27.5155) |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFGH60N60SMD
Order Code1885737
Technical Datasheet
Continuous Collector Current120A
Collector Emitter Saturation Voltage1.9V
Power Dissipation600W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-247AB
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCLead (27-Jun-2024)
Product Overview
The FGH60N60SMD is a Field Stop IGBT with high current capability and low saturation voltage.
- Fast switching
- 175°C maximum junction temperature
- Tighten parameter distribution
- High input impedance
- Positive temperature coefficient for easy parallel operating
Applications
Power Management, Alternative Energy, Communications & Networking
Technical Specifications
Continuous Collector Current
120A
Power Dissipation
600W
Transistor Case Style
TO-247AB
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead (27-Jun-2024)
Collector Emitter Saturation Voltage
1.9V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
Technical Docs (3)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00542