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NDC7001C
Dual MOSFET, Complementary N and P Channel, 50 V, 50 V, 340 mA, 340 mA, 1 ohm
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Available to Order
Manufacturer Standard Lead Time: 22 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 3000+ | CNY1.130 (CNY1.2769) |
| 9000+ | CNY1.100 (CNY1.243) |
| 24000+ | CNY1.070 (CNY1.2091) |
| 45000+ | CNY1.030 (CNY1.1639) |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
CNY3,390.00 (CNY3,830.70 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNDC7001C
Order Code2323212
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel50V
Drain Source Voltage Vds P Channel50V
Continuous Drain Current Id N Channel340mA
Continuous Drain Current Id P Channel340mA
Drain Source On State Resistance N Channel1ohm
Drain Source On State Resistance P Channel1ohm
Transistor Case StyleSuperSOT
No. of Pins6Pins
Power Dissipation N Channel700mW
Power Dissipation P Channel700mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (23-Jan-2024)
Product Overview
The NDC7001C is a dual N/P-channel enhancement-mode FET produced using high cell density and DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. This device is particularly suited for low voltage, low current, switching and power supply applications.
- High saturation current
- High density cell design for low RDS (ON)
- Design using copper lead-frame for superior thermal and electrical capabilities
Applications
Industrial, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
50V
Continuous Drain Current Id P Channel
340mA
Drain Source On State Resistance P Channel
1ohm
No. of Pins
6Pins
Power Dissipation P Channel
700mW
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
50V
Continuous Drain Current Id N Channel
340mA
Drain Source On State Resistance N Channel
1ohm
Transistor Case Style
SuperSOT
Power Dissipation N Channel
700mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (2)
Alternatives for NDC7001C
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000041