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NTBG032N065M3S
Silicon Carbide MOSFET, Single, N Channel, 52 A, 650 V, 0.044 ohm, TO-263HV (D2PAK)
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ManufacturerONSEMI
Manufacturer Part NoNTBG032N065M3S
Order Code4583070
Product RangeEliteSiC Series
Technical Datasheet
800 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY54.480 (CNY61.5624) |
| 10+ | CNY46.320 (CNY52.3416) |
| 100+ | CNY38.600 (CNY43.618) |
| 500+ | CNY34.060 (CNY38.4878) |
| 800+ | CNY33.730 (CNY38.1149) |
| 1600+ | CNY33.390 (CNY37.7307) |
| 2400+ | CNY33.050 (CNY37.3465) |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
CNY54.48 (CNY61.56 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTBG032N065M3S
Order Code4583070
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id52A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.044ohm
Transistor Case StyleTO-263HV (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4V
Power Dissipation200W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCNo SVHC (27-Jun-2024)
Product Overview
NTBG032N065M3S is a 650V M3S planar SiC MOSFET in a 7 pin D2PAK package. It is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. Typical applications include SMPS, solar inverters, UPS, energy storages, EV charging infrastructure.
- Drain to source voltage is 650V, maximum drain current is 52A
- Typical RDS(ON) = 32mohm at VGS = 18V
- Ultra low gate charge QG(tot) = 69nC
- High speed switching with low capacitance (Coss = 113pF)
- 100% avalanche tested
- Operating junction temperature range from -55 to +175°C
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
52A
Drain Source On State Resistance
0.044ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
175°C
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-263HV (D2PAK)
Rds(on) Test Voltage
18V
Power Dissipation
200W
Product Range
EliteSiC Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001