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NTBL060N065SC1
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 46 A, 650 V, 0.07 ohm, H-PSOF
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTBL060N065SC1
Order Code4472904
Product RangeEliteSiC Series
Technical Datasheet
2,000 In Stock
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2000 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY57.390 (CNY64.8507) |
| 10+ | CNY48.610 (CNY54.9293) |
| 100+ | CNY44.490 (CNY50.2737) |
| 500+ | CNY42.500 (CNY48.025) |
| 2000+ | CNY40.360 (CNY45.6068) |
| 4000+ | CNY38.200 (CNY43.166) |
| 6000+ | CNY36.050 (CNY40.7365) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY57.39 (CNY64.85 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTBL060N065SC1
Order Code4472904
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id46A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.07ohm
Transistor Case StyleH-PSOF
No. of Pins8Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.3V
Power Dissipation170W
Operating Temperature Max175°C
Product RangeEliteSiC Series
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
46A
Drain Source On State Resistance
0.07ohm
No. of Pins
8Pins
Gate Source Threshold Voltage Max
4.3V
Operating Temperature Max
175°C
SVHC
No SVHC (27-Jun-2024)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
H-PSOF
Rds(on) Test Voltage
18V
Power Dissipation
170W
Product Range
EliteSiC Series
Technical Docs (1)
Legislation and Environmental
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001