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NTMC083NP10M5L
Dual MOSFET, N and P Channel, 100 V, 100 V, 4.1 A, 4.1 A, 0.0594 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY3.950 (CNY4.4635) |
| 500+ | CNY3.280 (CNY3.7064) |
| 1000+ | CNY2.980 (CNY3.3674) |
| 5000+ | CNY2.950 (CNY3.3335) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY395.00 (CNY446.35 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMC083NP10M5L
Order Code3787297RL
Technical Datasheet
Transistor PolarityN and P Channel
Channel TypeN and P Channel
Drain Source Voltage Vds100V
Drain Source Voltage Vds N Channel100V
Continuous Drain Current Id4.1A
Drain Source Voltage Vds P Channel100V
Continuous Drain Current Id N Channel4.1A
On Resistance Rds(on)0.0594ohm
Continuous Drain Current Id P Channel4.1A
Drain Source On State Resistance N Channel0.0594ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.0594ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.9V
Power Dissipation Pd3.1W
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
Product Overview
Power, dual N- and P-channel (100V, 83mohm, 4.5A, -100V, 131ohm, -3.6A) MOSFET is typically used in power tools, battery operated vacuums, UAV/drones, material handling, motor drive and home automation applications.
- Small footprint (5 x 6mm) for compact design
- Low RDS(on) to minimize conduction losses
- Low QG and capacitance to minimize driver losses
- Not ESD protected
- Low conduction loss, standard footprint
Technical Specifications
Transistor Polarity
N and P Channel
Drain Source Voltage Vds
100V
Continuous Drain Current Id
4.1A
Continuous Drain Current Id N Channel
4.1A
Continuous Drain Current Id P Channel
4.1A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.0594ohm
Gate Source Threshold Voltage Max
1.9V
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
N and P Channel
Drain Source Voltage Vds N Channel
100V
Drain Source Voltage Vds P Channel
100V
On Resistance Rds(on)
0.0594ohm
Drain Source On State Resistance N Channel
0.0594ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
3.1W
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001