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NTMFS0D4N04XMT1G
Power MOSFET, N Channel, 40 V, 509 A, 420 µohm, DFN, Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY25.200 (CNY28.476) |
| 10+ | CNY17.460 (CNY19.7298) |
| 100+ | CNY12.630 (CNY14.2719) |
| 500+ | CNY12.020 (CNY13.5826) |
| 1500+ | CNY11.400 (CNY12.882) |
| 3000+ | CNY10.780 (CNY12.1814) |
| 4500+ | CNY10.150 (CNY11.4695) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY25.20 (CNY28.48 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMFS0D4N04XMT1G
Order Code4381449
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id509A
Drain Source On State Resistance420µohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation197W
No. of Pins5Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
509A
Transistor Case Style
DFN
Rds(on) Test Voltage
10V
Power Dissipation
197W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
40V
Drain Source On State Resistance
420µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.5V
No. of Pins
5Pins
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001