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NVMFWS003N10MCT1G
Power MOSFET, N Channel, 100 V, 169 A, 0.0031 ohm, WDFN, Surface Mount
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1,600 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY23.380 (CNY26.4194) |
| 10+ | CNY18.820 (CNY21.2666) |
| 100+ | CNY16.100 (CNY18.193) |
| 500+ | CNY13.380 (CNY15.1194) |
| 1500+ | CNY13.040 (CNY14.7352) |
| 3000+ | CNY12.690 (CNY14.3397) |
| 4500+ | CNY12.350 (CNY13.9555) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY23.38 (CNY26.42 inc GST)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNVMFWS003N10MCT1G
Order Code4317988
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id169A
Drain Source On State Resistance0.0031ohm
Transistor Case StyleWDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation194W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
169A
Transistor Case Style
WDFN
Rds(on) Test Voltage
10V
Power Dissipation
194W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0031ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
4Pins
Product Range
-
SVHC
Lead (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000013