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RMLV0408EGSA-4S2#KA1
SRAM, Asynchronous SRAM, LPSRAM, 4 Mbit, 512Kword x 8bit, STSOP, 32 Pins, 2.7 V
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY71.150 (CNY80.3995) |
| 250+ | CNY66.400 (CNY75.032) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY7,115.00 (CNY8,039.95 inc GST)
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Product Information
ManufacturerRENESAS
Manufacturer Part NoRMLV0408EGSA-4S2#KA1
Order Code4146924RL
Technical Datasheet
Memory Size4Mbit
SRAM TypeAsynchronous SRAM, LPSRAM
SRAM Memory Configuration512Kword x 8bit
Memory Density4Mbit
Memory Configuration512Kword x 8bit
Supply Voltage Range2.7V to 3.6V
Memory Case StyleSTSOP
IC Case / PackageSTSOP
No. of Pins32Pins
Supply Voltage Min2.7V
Access Time45ns
Supply Voltage Max3.6V
Supply Voltage Nom3V
Clock Frequency Max-
IC MountingSurface Mount
Operating Temperature Min-40°C
Operating Temperature Max85°C
Product Range-
Automotive Qualification Standard-
MSLMSL 3 - 168 hours
SVHCNo SVHC (21-Jan-2025)
Product Overview
RMLV0408E series 4Mb advanced LPSRAM (512-kword × 8bit). It is a family of 4-Mbit static RAMs organized 524,288-word × 8bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. This has realized higher density, higher performance, and low power consumption. It offers low power standby power dissipation, therefore, it is suitable for battery backup systems.
- Maximum access time is 45ns, typical current consumption standby is 0.3µA
- Equal access and cycle times, common data input and output three state output
- Directly TTL compatible all inputs and outputs, battery backup operation
- Supply voltage range from 2.7 to 3.6V, input high voltage is 2.2V (min)
- Input leakage current is 1µA (max, Vin = VSS to VCC)
- Operating current is 10mA (max, CS# =VIL, others = VIH/VIL, II/O = 0mA)
- Standby current is 0.3mA (max, CS2 = VIL, others = VSS to VCC)
- Input capacitance is 8pF (max, Vin =0V, Vcc = 2.7 to 3.6V, f = 1MHz, Ta = -40 to +85°C)
- Read cycle time is 45ns (minimum)
- 32-pin plastic TSOP package, temperature range from -40 to +85°C
Technical Specifications
Memory Size
4Mbit
SRAM Memory Configuration
512Kword x 8bit
Memory Configuration
512Kword x 8bit
Memory Case Style
STSOP
No. of Pins
32Pins
Access Time
45ns
Supply Voltage Nom
3V
IC Mounting
Surface Mount
Operating Temperature Max
85°C
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
SRAM Type
Asynchronous SRAM, LPSRAM
Memory Density
4Mbit
Supply Voltage Range
2.7V to 3.6V
IC Case / Package
STSOP
Supply Voltage Min
2.7V
Supply Voltage Max
3.6V
Clock Frequency Max
-
Operating Temperature Min
-40°C
Product Range
-
MSL
MSL 3 - 168 hours
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85423245
US ECCN:3A991.b.2.a
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001