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AG502EGD3HRBTL
Power MOSFET, P Channel, 40 V, 68 A, 0.0131 ohm, TO-252 (DPAK), Surface Mount
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77 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY12.140 (CNY13.7182) |
| 10+ | CNY8.250 (CNY9.3225) |
| 100+ | CNY6.560 (CNY7.4128) |
| 500+ | CNY5.460 (CNY6.1698) |
| 1000+ | CNY5.280 (CNY5.9664) |
| 5000+ | CNY5.090 (CNY5.7517) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY12.14 (CNY13.72 inc GST)
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Product Information
ManufacturerROHM
Manufacturer Part NoAG502EGD3HRBTL
Order Code4633486
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id68A
Drain Source On State Resistance0.0131ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation77W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
68A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
77W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0131ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001