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RH6N040BHTB1
Power MOSFET, N Channel, 80 V, 65 A, 0.0083 ohm, HSMT, Surface Mount
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50 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY6.890 (CNY7.7857) |
| 500+ | CNY6.250 (CNY7.0625) |
| 1000+ | CNY5.080 (CNY5.7404) |
| 5000+ | CNY4.810 (CNY5.4353) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY689.00 (CNY778.57 inc GST)
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Product Information
ManufacturerROHM
Manufacturer Part NoRH6N040BHTB1
Order Code4540850RL
Technical Datasheet
Drain Source Voltage Vds80V
Continuous Drain Current Id65A
Drain Source On State Resistance0.0083ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation59W
No. of Pins8Pins
Operating Temperature Max150°C
Technical Specifications
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0083ohm
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Continuous Drain Current Id
65A
Rds(on) Test Voltage
10V
Power Dissipation
59W
Operating Temperature Max
150°C
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00003