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SP8M51HZGTB
Dual MOSFET, N and P Channel, 100 V, 100 V, 3 A, 3 A, 0.12 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY7.850 (CNY8.8705) |
| 500+ | CNY6.260 (CNY7.0738) |
| 1000+ | CNY5.210 (CNY5.8873) |
| 5000+ | CNY4.990 (CNY5.6387) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY785.00 (CNY887.05 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerROHM
Manufacturer Part NoSP8M51HZGTB
Order Code3580407RL
Technical Datasheet
Channel TypeN and P Channel
Transistor PolarityN and P Channel
Drain Source Voltage Vds100V
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds P Channel100V
Continuous Drain Current Id3A
On Resistance Rds(on)0.12ohm
Continuous Drain Current Id N Channel3A
Continuous Drain Current Id P Channel3A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.12ohm
Drain Source On State Resistance P Channel0.12ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOP
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd2W
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSL-
SVHCNo SVHC (23-Jan-2024)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N and P Channel
Drain Source Voltage Vds
100V
Drain Source Voltage Vds P Channel
100V
On Resistance Rds(on)
0.12ohm
Continuous Drain Current Id P Channel
3A
Drain Source On State Resistance N Channel
0.12ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (23-Jan-2024)
Transistor Polarity
N and P Channel
Drain Source Voltage Vds N Channel
100V
Continuous Drain Current Id
3A
Continuous Drain Current Id N Channel
3A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.12ohm
Transistor Case Style
SOP
Power Dissipation Pd
2W
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000166