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RF3L05150CB4
RF FET Transistor, 90 V, 150 W, 1 GHz, LBB
Image is for illustrative purposes only. Please refer to product description.
188 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY1,504.230 (CNY1,699.7799) |
| 5+ | CNY1,316.210 (CNY1,487.3173) |
| 10+ | CNY1,228.870 (CNY1,388.6231) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY1,504.23 (CNY1,699.78 inc GST)
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoRF3L05150CB4
Order Code3677411
Technical Datasheet
Drain Source Voltage Vds90V
Continuous Drain Current Id-
Power Dissipation150W
Operating Frequency Min-
Operating Frequency Max1GHz
Transistor Case StyleLBB
No. of Pins5Pins
Operating Temperature Max200°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Drain Source Voltage Vds
90V
Power Dissipation
150W
Operating Frequency Max
1GHz
No. of Pins
5Pins
Channel Type
N Channel
Product Range
-
Continuous Drain Current Id
-
Operating Frequency Min
-
Transistor Case Style
LBB
Operating Temperature Max
200°C
Transistor Mounting
Flange
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00024