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SCT012H90G3AG
Silicon Carbide MOSFET, Single, N Channel, 110 A, 900 V, 0.0158 ohm, H2PAK
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT012H90G3AG
Order Code4458499RL
Technical Datasheet
50 In Stock
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50 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 10+ | CNY282.310 (CNY319.0103) |
| 50+ | CNY253.100 (CNY286.003) |
| 100+ | CNY233.630 (CNY264.0019) |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 1
CNY2,823.10 (CNY3,190.10 inc GST)
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT012H90G3AG
Order Code4458499RL
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id110A
Drain Source Voltage Vds900V
Drain Source On State Resistance0.0158ohm
Transistor Case StyleH2PAK
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.2V
Power Dissipation625W
Operating Temperature Max175°C
Product Range-
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
110A
Drain Source On State Resistance
0.0158ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.2V
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
900V
Transistor Case Style
H2PAK
Rds(on) Test Voltage
18V
Power Dissipation
625W
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Italy
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Italy
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001