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SCT040TO65G3
Silicon Carbide MOSFET, Single, N Channel, 35 A, 650 V, 0.063 ohm, TOLL
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21 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY57.600 (CNY65.088) |
| 5+ | CNY53.500 (CNY60.455) |
| 10+ | CNY49.400 (CNY55.822) |
| 50+ | CNY48.420 (CNY54.7146) |
| 100+ | CNY47.430 (CNY53.5959) |
| 250+ | CNY46.440 (CNY52.4772) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY57.60 (CNY65.09 inc GST)
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCT040TO65G3
Order Code4572341
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id35A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.063ohm
Transistor Case StyleTOLL
No. of Pins8Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.2V
Power Dissipation288W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
35A
Drain Source On State Resistance
0.063ohm
No. of Pins
8Pins
Gate Source Threshold Voltage Max
4.2V
Operating Temperature Max
175°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TOLL
Rds(on) Test Voltage
18V
Power Dissipation
288W
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Thailand
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001