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SCTW100N65G2AG
Silicon Carbide MOSFET, Single, N Channel, 100 A, 650 V, 0.02 ohm, TO-247
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCTW100N65G2AG
Order Code3387273
Technical Datasheet
336 In Stock
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| Quantity | Price (inc GST) |
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| 1+ | CNY191.570 (CNY216.4741) |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSCTW100N65G2AG
Order Code3387273
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id100A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.02ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max3.1V
Power Dissipation420W
Operating Temperature Max200°C
Product Range-
SVHCNo SVHC (21-Jan-2025)
Product Overview
SCTW100N65G2AG is an automotive-grade silicon carbide power MOSFET. This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
- AEC-Q101 qualified
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Very high operating junction temperature capability (TJ = 200 °C)
- 650V drain-source voltage
- 100A drain current (continuous) at TC = 25°C
- 420W total power dissipation at TC = 25°C
- HiP247 package
- Operating junction temperature range from -55 to 200°C
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
100A
Drain Source On State Resistance
0.02ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
3.1V
Operating Temperature Max
200°C
SVHC
No SVHC (21-Jan-2025)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
420W
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0045