STPSC10H065G-TR
Silicon Carbide Schottky Diode, 650V Series, Single, 650 V, 10 A, 28.5 nC, TO-263
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY27.810 (CNY31.4253) |
| 10+ | CNY18.770 (CNY21.2101) |
| 100+ | CNY17.110 (CNY19.3343) |
| 500+ | CNY15.460 (CNY17.4698) |
| 1000+ | CNY15.350 (CNY17.3455) |
Product Information
Product Overview
The STPSC10H065G-TR is a Power Schottky Silicon Carbide Diode features ultra high performance. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. It is especially suited for use in PFC applications and this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
- No or negligible reverse recovery
- Switching behaviour independent of temperature
- High forward surge capability
Applications
Industrial
Technical Specifications
650V
650V
28.5nC
3 Pin
Surface Mount
No SVHC (21-Jan-2025)
Single
10A
TO-263 (D2PAK)
175°C
-
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate