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CSD75301W1015
Dual MOSFET, P Channel, 20 V, 1.2 A
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY3.690 (CNY4.1697) |
| 10+ | CNY3.210 (CNY3.6273) |
| 100+ | CNY2.840 (CNY3.2092) |
| 500+ | CNY2.770 (CNY3.1301) |
Price for:Each
Minimum: 1
Multiple: 1
CNY3.69 (CNY4.17 inc GST)
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Product Information
ManufacturerTEXAS INSTRUMENTS
Manufacturer Part NoCSD75301W1015
Order Code1892455
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Continuous Drain Current Id N Channel-
Transistor Case StyleDSBGA
Power Dissipation N Channel-
Product Range-
Qualification-
Product Overview
The CSD75301W1015 is a NexFET™ dual P-channel Power MOSFET designed to deliver the lowest ON-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. It is suitable for use with load switch, battery protection and management applications.
- Common source configuration
- Small footprint
- Ultra Low Qg and Qgd
- Halogen-free
Applications
Industrial, Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id N Channel
-
Power Dissipation N Channel
-
Qualification
-
Drain Source Voltage Vds N Channel
-
Transistor Case Style
DSBGA
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0002