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CSD86330Q3D
Dual MOSFET, N Channel, 25 V, 25 V, 20 A, 20 A, 4.6 ohm
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Available to Order
Manufacturer Standard Lead Time: 105 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY8.530 (CNY9.6389) |
| 500+ | CNY7.290 (CNY8.2377) |
| 1000+ | CNY7.160 (CNY8.0908) |
| 5000+ | CNY7.010 (CNY7.9213) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY853.00 (CNY963.89 inc GST)
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Product Information
ManufacturerTEXAS INSTRUMENTS
Manufacturer Part NoCSD86330Q3D
Order Code3009684RL
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel25V
Drain Source Voltage Vds25V
Continuous Drain Current Id20A
Drain Source Voltage Vds P Channel25V
On Resistance Rds(on)4.6ohm
Continuous Drain Current Id N Channel20A
Continuous Drain Current Id P Channel20A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel4.6ohm
Drain Source On State Resistance P Channel4.6ohm
Rds(on) Test Voltage4.5V
Transistor Case StyleSON
Gate Source Threshold Voltage Max1.4V
No. of Pins8Pins
Power Dissipation Pd6W
Power Dissipation N Channel6W
Power Dissipation P Channel6W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
Product Overview
The CSD86330Q3D is a Synchronous Buck NexFET™ Power Block optimized for synchronous buck applications offering high current, high efficiency and high frequency capability in a small 3.3x3.3mm outline. Optimized for 5V gate drive applications, this product offers a flexible solution capable of offering a high density power supply when paired with any 5Vgate drive from an external controller/driver.
- Half-bridge power block
- 90% System efficiency at 15A
- High frequency operation (up to 1.5MHz)
- High density
- Low switching losses
- Ultra low inductance package
- Halogen-free
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
25V
Continuous Drain Current Id
20A
On Resistance Rds(on)
4.6ohm
Continuous Drain Current Id P Channel
20A
Drain Source On State Resistance N Channel
4.6ohm
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1.4V
Power Dissipation Pd
6W
Power Dissipation P Channel
6W
Product Range
-
Automotive Qualification Standard
-
Transistor Polarity
N Channel
Drain Source Voltage Vds
25V
Drain Source Voltage Vds P Channel
25V
Continuous Drain Current Id N Channel
20A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
4.6ohm
Transistor Case Style
SON
No. of Pins
8Pins
Power Dissipation N Channel
6W
Operating Temperature Max
150°C
Qualification
-
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85423990
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00027