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CSD88537ND
Dual MOSFET, N Channel, 60 V, 60 V, 15 A, 15 A, 0.0125 ohm
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Available to Order
Manufacturer Standard Lead Time: 105 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY5.680 (CNY6.4184) |
| 500+ | CNY4.500 (CNY5.085) |
| 1000+ | CNY3.690 (CNY4.1697) |
| 5000+ | CNY3.630 (CNY4.1019) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY568.00 (CNY641.84 inc GST)
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Product Information
ManufacturerTEXAS INSTRUMENTS
Manufacturer Part NoCSD88537ND
Order Code3009688RL
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id15A
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)0.0125ohm
Continuous Drain Current Id N Channel15A
Continuous Drain Current Id P Channel15A
Drain Source On State Resistance N Channel0.0125ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.0125ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Transistor Case StyleSOIC
Power Dissipation Pd2.1W
No. of Pins8Pins
Power Dissipation N Channel2.1W
Power Dissipation P Channel2.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
Product Overview
The CSD88537ND is a 60V Dual N-channel NexFET™ Power MOSFET designed to serve as a half bridge in low current motor control applications.
- Ultra low Qg and Qgd
- Avalanche rated
- Halogen-free
Applications
Power Management, Motor Drive & Control
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
15A
On Resistance Rds(on)
0.0125ohm
Continuous Drain Current Id P Channel
15A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation P Channel
2.1W
Product Range
-
Automotive Qualification Standard
-
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
15A
Drain Source On State Resistance N Channel
0.0125ohm
Drain Source On State Resistance P Channel
0.0125ohm
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
2.1W
Power Dissipation N Channel
2.1W
Operating Temperature Max
150°C
Qualification
-
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536