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Quantity | Price (inc GST) |
---|---|
1+ | CNY53.670 (CNY60.6471) |
10+ | CNY46.960 (CNY53.0648) |
25+ | CNY38.910 (CNY43.9683) |
50+ | CNY34.880 (CNY39.4144) |
100+ | CNY32.200 (CNY36.386) |
250+ | CNY30.050 (CNY33.9565) |
500+ | CNY28.440 (CNY32.1372) |
Product Information
Product Overview
The LPC662IM/NOPB is a low power CMOS dual Operational Amplifier ideal for operation from a single supply. It features a wide range of operating voltage from +5 to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifier in the past are not a problem with this design. Input VOS, drift and broadband noise as well as voltage gain (into 100k and 5k) is all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5mW. This chip is built with national's advanced double-poly silicon-gate CMOS process.
- Input common-mode includes GND
- Micropower operation (<lt/>0.5mW)
- Specified for 100kΩ and 5kΩ loads
- 120dB High voltage gain
- 3mV Low input offset voltage
- 1.3µV/°C Low offset voltage drift
- 2fA Ultra low input bias current
- 0.01% at 1kHz Low distortion
- Green product and no Sb/Br
Applications
Signal Processing
Technical Specifications
2Channels
0.11V/µs
SOIC
Low Input Bias
1mV
Surface Mount
85°C
-
No SVHC (27-Jun-2018)
-
2 Amplifier
350kHz
5V to 15V
8Pins
Rail - Rail Output (RRO)
0.002pA
-40°C
-
MSL 1 - Unlimited
SOIC
350kHz
0.11V/µs
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate