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MT3S111(TE85L,F)
Bipolar (BJT) Single Transistor, NPN, 6 V, 100 mA, 700 mW, TO-236, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTOSHIBA
Manufacturer Part NoMT3S111(TE85L,F)
Order Code3872261
Also Known AsMT3S111, MT3S111(TE85L
Technical Datasheet
Available to Order
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY5.080 (CNY5.7404) |
| 10+ | CNY3.570 (CNY4.0341) |
| 100+ | CNY2.770 (CNY3.1301) |
| 500+ | CNY2.510 (CNY2.8363) |
| 1000+ | CNY2.370 (CNY2.6781) |
| 5000+ | CNY2.230 (CNY2.5199) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY5.08 (CNY5.74 inc GST)
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoMT3S111(TE85L,F)
Order Code3872261
Also Known AsMT3S111, MT3S111(TE85L
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max6V
Continuous Collector Current100mA
Power Dissipation700mW
Transistor Case StyleTO-236
Transistor MountingSurface Mount
No. of Pins3Pins
Transition Frequency11.5GHz
DC Current Gain hFE Min200hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Transistor Polarity
NPN
Continuous Collector Current
100mA
Transistor Case Style
TO-236
No. of Pins
3Pins
DC Current Gain hFE Min
200hFE
Product Range
-
Collector Emitter Voltage Max
6V
Power Dissipation
700mW
Transistor Mounting
Surface Mount
Transition Frequency
11.5GHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001