Print Page
TPN2R703NL,L1Q(M
Power MOSFET, N Channel, 30 V, 90 A, 0.0022 ohm, TSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerTOSHIBA
Manufacturer Part NoTPN2R703NL,L1Q(M
Order Code4173231
Product RangeU-MOSVIII-H Series
Also Known AsTPN2R703NL, TPN2R703NL,L1Q
Technical Datasheet
3,184 In Stock
Need more?
3184 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY8.520 (CNY9.6276) |
| 10+ | CNY6.580 (CNY7.4354) |
| 100+ | CNY4.790 (CNY5.4127) |
| 500+ | CNY3.990 (CNY4.5087) |
| 1000+ | CNY3.680 (CNY4.1584) |
| 5000+ | CNY3.670 (CNY4.1471) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY8.52 (CNY9.63 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTPN2R703NL,L1Q(M
Order Code4173231
Product RangeU-MOSVIII-H Series
Also Known AsTPN2R703NL, TPN2R703NL,L1Q
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id90A
Drain Source On State Resistance0.0022ohm
Transistor Case StyleTSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.3V
Power Dissipation42W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeU-MOSVIII-H Series
Qualification-
Product Overview
TPN2R703NL,L1Q(M is a N-CH 30V, 45A MOSFET in surface mount 8TSON package. Suitable for High-Efficiency DC-DC converters and switching voltage regulators.
- High-speed switching
- Small gate charge QSW is 5.2nC (typ)
- Low drain-source on-resistance RDS(ON) is 3.3mohm (typ.) (VGS = 4.5V)
- Low leakage current IDSS is 10µA (max) (VDS = 30V)
- Enhancement mode: Vth = 1.3 to 2.3V (VDS = 10V, ID = 0.3mA)
- 30V VDSS drain source voltage
- ±20VGSS gate source voltage
- 45A avalanche current
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
90A
Transistor Case Style
TSON
Rds(on) Test Voltage
10V
Power Dissipation
42W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0022ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.3V
No. of Pins
8Pins
Product Range
U-MOSVIII-H Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00003