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BPW76A
Phototransistor, 850 nm, 40 °, 250 mW, 3 Pins, TO-18
Image is for illustrative purposes only. Please refer to product description.
811 In Stock
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802 Delivery in 5-6 Business Days(UK stock)
9 Delivery in 5-6 Business Days(US stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY25.920 (CNY29.2896) |
| 10+ | CNY19.010 (CNY21.4813) |
| 25+ | CNY17.670 (CNY19.9671) |
| 50+ | CNY16.330 (CNY18.4529) |
| 100+ | CNY14.980 (CNY16.9274) |
| 500+ | CNY13.180 (CNY14.8934) |
Price for:Each
Minimum: 1
Multiple: 1
CNY25.92 (CNY29.29 inc GST)
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Product Overview
The BPW76A is a Silicon NPN Phototransistor with high radiant sensitivity. It is sensitive to visible and near infrared radiation. It is suitable for visible and near infrared radiation.
- High photo sensitivity
- High radiant sensitivity
- Fast response times
- Base terminal connected
- Flat glass window
- ±40° Angle of half sensitivity
Applications
Sensing & Instrumentation
Technical Specifications
Wavelength Typ
850nm
Power Consumption
250mW
Transistor Case Style
TO-18
Automotive Qualification Standard
-
SVHC
No SVHC (07-Nov-2024)
Viewing Angle
40°
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85414900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000388