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BPW85C
Phototransistor, 850 nm, 25 °, 100 mW, 2 Pins, T-1 (3mm)
Image is for illustrative purposes only. Please refer to product description.
Available to Order
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| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY5.280 (CNY5.9664) |
| 10+ | CNY3.430 (CNY3.8759) |
| 100+ | CNY2.450 (CNY2.7685) |
| 500+ | CNY2.270 (CNY2.5651) |
| 1000+ | CNY2.000 (CNY2.260) |
Price for:Each
Minimum: 5
Multiple: 5
CNY26.40 (CNY29.83 inc GST)
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Product Overview
The BPW85C is a Silicon NPN Phototransistor with high radiant sensitivity in clear plastic package. It is sensitive to visible and near infrared radiation. It is suitable for detector in electronic control and drive circuits.
- Leaded package
- High photo sensitivity
- High radiant sensitivity
- Suitable for visible and near infrared radiation
- Fast response time
- ϕ = ±25° Angle of half sensitivity
Applications
Sensing & Instrumentation, Automation & Process Control
Technical Specifications
Wavelength Typ
850nm
Power Consumption
100mW
Transistor Case Style
T-1 (3mm)
Automotive Qualification Standard
-
SVHC
No SVHC (07-Nov-2024)
Viewing Angle
25°
No. of Pins
2Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85414900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000215