SI1869DH-T1-E3
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 1.2 A, 1.2 A, 0.132 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY2.600 (CNY2.938) |
| 500+ | CNY2.110 (CNY2.3843) |
| 1000+ | CNY1.700 (CNY1.921) |
| 5000+ | CNY1.620 (CNY1.8306) |
Product Information
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Product Overview
The SI1869DH-T1-E3 is a N/P-channel MOSFET ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. The low ON-resistance p-channel TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5V.
- TrenchFET® power MOSFET
- Low profile
- Small footprint
- Adjustable slew-rate
Applications
Industrial, Portable Devices, Power Management
Technical Specifications
Complementary N and P Channel
20V
20V
1.2A
1.2A
Surface Mount
4.5V
-
1W
1W
-
-
No SVHC (23-Jan-2024)
Complementary N and P Channel
20V
1.2A
0.132ohm
0.132ohm
0.132ohm
SC-70
6Pins
1W
150°C
-
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate