Print Page
SI1902CDL-T1-GE3
Dual MOSFET, N Channel, 20 V, 20 V, 1.1 A, 1.1 A, 0.195 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI1902CDL-T1-GE3
Order Code2454801RL
Your Part Number
Technical Datasheet
6,839 In Stock
Need more?
6839 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY1.870 (CNY2.1131) |
| 500+ | CNY1.420 (CNY1.6046) |
| 1000+ | CNY1.090 (CNY1.2317) |
| 5000+ | CNY0.890 (CNY1.0057) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY187.00 (CNY211.31 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1902CDL-T1-GE3
Order Code2454801RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id1.1A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.195ohm
Continuous Drain Current Id N Channel1.1A
Continuous Drain Current Id P Channel1.1A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.195ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.195ohm
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max1.5V
No. of Pins6Pins
Power Dissipation Pd420mW
Power Dissipation N Channel420mW
Power Dissipation P Channel420mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
1.1A
On Resistance Rds(on)
0.195ohm
Continuous Drain Current Id P Channel
1.1A
Drain Source On State Resistance N Channel
0.195ohm
Drain Source On State Resistance P Channel
0.195ohm
Gate Source Threshold Voltage Max
1.5V
Power Dissipation Pd
420mW
Power Dissipation P Channel
420mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
1.1A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOT-363
No. of Pins
6Pins
Power Dissipation N Channel
420mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Alternatives for SI1902CDL-T1-GE3
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00033