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Quantity | Price (inc GST) |
---|---|
100+ | CNY2.060 (CNY2.3278) |
500+ | CNY1.780 (CNY2.0114) |
1500+ | CNY1.750 (CNY1.9775) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY206.00 (CNY232.78 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2306BDS-T1-E3
Order Code1470157RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id4A
Drain Source On State Resistance0.038ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation1.25W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SI2306BDS-T1-E3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
- 100% Rg tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4A
Transistor Case Style
TO-236
Rds(on) Test Voltage
10V
Power Dissipation
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.038ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000044