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SI4948BEY-T1-E3
Dual MOSFET, P Channel, 60 V, 60 V, 2.4 A, 2.4 A, 0.1 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI4948BEY-T1-E3
Order Code2396086RL
Your Part Number
Technical Datasheet
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY5.960 (CNY6.7348) |
| 500+ | CNY4.720 (CNY5.3336) |
| 1000+ | CNY4.350 (CNY4.9155) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY596.00 (CNY673.48 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4948BEY-T1-E3
Order Code2396086RL
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id2.4A
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)0.1ohm
Continuous Drain Current Id N Channel2.4A
Continuous Drain Current Id P Channel2.4A
Drain Source On State Resistance N Channel0.1ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.1ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Transistor Case StyleSOIC
Power Dissipation Pd1.4W
No. of Pins8Pins
Power Dissipation N Channel1.4W
Power Dissipation P Channel1.4W
Operating Temperature Max175°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SI4948BEY-T1-E3 is a dual P-channel MOSFET housed in a surface-mount package.
- TrenchFET® power MOSFET
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
2.4A
On Resistance Rds(on)
0.1ohm
Continuous Drain Current Id P Channel
2.4A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation P Channel
1.4W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (25-Jun-2025)
Channel Type
P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
2.4A
Drain Source On State Resistance N Channel
0.1ohm
Drain Source On State Resistance P Channel
0.1ohm
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
1.4W
Power Dissipation N Channel
1.4W
Operating Temperature Max
175°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000262