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SI7997DP-T1-GE3
Dual MOSFET, P Channel, 30 V, 30 V, 60 A, 60 A, 4500 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI7997DP-T1-GE3
Order Code2646396RL
Product RangeTrenchFET Series
Technical Datasheet
Available to Order
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY12.130 (CNY13.7069) |
| 500+ | CNY10.790 (CNY12.1927) |
| 1500+ | CNY9.430 (CNY10.6559) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY1,213.00 (CNY1,370.69 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7997DP-T1-GE3
Order Code2646396RL
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id60A
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel60A
On Resistance Rds(on)0.0045ohm
Continuous Drain Current Id P Channel60A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel4500µohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel4500µohm
Gate Source Threshold Voltage Max2.2V
Transistor Case StylePowerPAK SO
No. of Pins8Pins
Power Dissipation Pd46W
Power Dissipation N Channel46W
Power Dissipation P Channel46W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Automotive Qualification Standard-
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
60A
Continuous Drain Current Id N Channel
60A
Continuous Drain Current Id P Channel
60A
Drain Source On State Resistance N Channel
4500µohm
Drain Source On State Resistance P Channel
4500µohm
Transistor Case Style
PowerPAK SO
Power Dissipation Pd
46W
Power Dissipation P Channel
46W
Product Range
TrenchFET Series
Automotive Qualification Standard
-
SVHC
Lead (21-Jan-2025)
Transistor Polarity
P Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.0045ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.2V
No. of Pins
8Pins
Power Dissipation N Channel
46W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000454