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SI9634DY-T1-GE3
Dual MOSFET, N Channel, 60 V, 8 A, 0.029 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI9634DY-T1-GE3
Order Code4139039RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
4,377 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY4.180 (CNY4.7234) |
| 500+ | CNY3.280 (CNY3.7064) |
| 1000+ | CNY2.560 (CNY2.8928) |
| 5000+ | CNY2.350 (CNY2.6555) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY418.00 (CNY472.34 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI9634DY-T1-GE3
Order Code4139039RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityDual N Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id8A
Drain Source Voltage Vds P Channel-
On Resistance Rds(on)0.022ohm
Continuous Drain Current Id N Channel8A
Continuous Drain Current Id P Channel-
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.029ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation Pd3.6W
Power Dissipation N Channel3.6W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
8A
On Resistance Rds(on)
0.022ohm
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance N Channel
0.029ohm
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Power Dissipation N Channel
3.6W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
Dual N Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id N Channel
8A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
3.6W
Power Dissipation P Channel
-
Product Range
TrenchFET Gen IV Series
Automotive Qualification Standard
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000154