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SI9933CDY-T1-E3
Dual MOSFET, P Channel, 20 V, 20 V, 4 A, 4 A, 0.048 ohm
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1,195 In Stock
2,500 more incoming. You can reserve stock now
453 Next business day delivery available(Shanghai stock)
742 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY2.840 (CNY3.2092) |
| 500+ | CNY2.820 (CNY3.1866) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY284.00 (CNY320.92 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI9933CDY-T1-E3
Order Code2101482RL
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id4A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.048ohm
Continuous Drain Current Id N Channel4A
Continuous Drain Current Id P Channel4A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.048ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.048ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.4V
No. of Pins8Pins
Power Dissipation Pd3.1W
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
Dual P-channel 20V (D-S) MOSFET suitable for sue in load switch, DC/DC converter.
- TrenchFET® power MOSFET
- 100% Rg and UIS tested
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
4A
On Resistance Rds(on)
0.048ohm
Continuous Drain Current Id P Channel
4A
Drain Source On State Resistance N Channel
0.048ohm
Drain Source On State Resistance P Channel
0.048ohm
Gate Source Threshold Voltage Max
1.4V
Power Dissipation Pd
3.1W
Power Dissipation P Channel
3.1W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (21-Jan-2025)
Channel Type
P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
4A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000067