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SIA931DJ-T1-GE3
Dual MOSFET, P Channel, 30 V, 30 V, 4.5 A, 4.5 A, 0.052 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIA931DJ-T1-GE3
Order Code2400374
Your Part Number
Technical Datasheet
33,016 In Stock
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33016 Next business day delivery available(Shanghai stock)
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY3.670 (CNY4.1471) |
| 50+ | CNY3.020 (CNY3.4126) |
| 100+ | CNY2.370 (CNY2.6781) |
| 500+ | CNY1.480 (CNY1.6724) |
| 1500+ | CNY1.450 (CNY1.6385) |
| 3000+ | CNY1.380 (CNY1.5594) |
| 7500+ | CNY1.310 (CNY1.4803) |
Minimum: 5
Multiple: 5
CNY18.35 (CNY20.74 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA931DJ-T1-GE3
Order Code2400374
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel4.5A
Continuous Drain Current Id P Channel4.5A
Drain Source On State Resistance N Channel0.052ohm
Drain Source On State Resistance P Channel0.052ohm
Transistor Case StylePowerPAK SC-70
No. of Pins6Pins
Power Dissipation N Channel7.8W
Power Dissipation P Channel7.8W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SIA931DJ-T1-GE3 is a dual P-channel MOSFET housed in a surface-mount package. It is suitable for battery and load switch, DC-to-DC converter applications.
- Halogen-free
- TrenchFET® gen III power MOSFET
- Thermally enhanced PowerPAK® package
- Small footprint
- Low ON-resistance
- 100% Rg tested
Applications
Industrial, Power Management, Computers & Computer Peripherals
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
4.5A
Drain Source On State Resistance P Channel
0.052ohm
No. of Pins
6Pins
Power Dissipation P Channel
7.8W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
4.5A
Drain Source On State Resistance N Channel
0.052ohm
Transistor Case Style
PowerPAK SC-70
Power Dissipation N Channel
7.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002