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SIHH24N65EF-T1-GE3
Power MOSFET, N Channel, 650 V, 23 A, 0.158 ohm, PowerPAK 8 x 8, Surface Mount
50 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 10+ | CNY65.510 (CNY74.0263) |
| 50+ | CNY64.140 (CNY72.4782) |
| 100+ | CNY62.780 (CNY70.9414) |
| 250+ | CNY61.410 (CNY69.3933) |
Price for:Each (Supplied on Cut Tape)
Minimum: 10
Multiple: 1
CNY655.10 (CNY740.26 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIHH24N65EF-T1-GE3
Order Code4246961RL
Product RangeE Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id23A
Drain Source On State Resistance0.158ohm
Transistor Case StylePowerPAK 8 x 8
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation202W
No. of Pins4Pins
Operating Temperature Max150°C
Product RangeE Series
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
23A
Transistor Case Style
PowerPAK 8 x 8
Rds(on) Test Voltage
10V
Power Dissipation
202W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.158ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
4Pins
Product Range
E Series
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00001