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SIJA58ADP-T1-GE3
Power MOSFET, N Channel, 40 V, 109 A, 0.0022 ohm, PowerPAK SO, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSIJA58ADP-T1-GE3
Order Code3019107RL
Product RangeTrenchFET Gen IV
Technical Datasheet
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY2.510 (CNY2.8363) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY251.00 (CNY283.63 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIJA58ADP-T1-GE3
Order Code3019107RL
Product RangeTrenchFET Gen IV
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id109A
Drain Source On State Resistance0.0022ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Power Dissipation56.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
109A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
56.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
0.0022ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.4V
No. of Pins
8Pins
Product Range
TrenchFET Gen IV
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001