Print Page
SISF20DN-T1-GE3
Dual MOSFET, N Channel, 60 V, 60 V, 52 A, 52 A, 0.01 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSISF20DN-T1-GE3
Order Code3050578RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 36 week(s)
Notify me when back in stock
| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY7.620 (CNY8.6106) |
| 500+ | CNY6.420 (CNY7.2546) |
| 1000+ | CNY5.680 (CNY6.4184) |
| 5000+ | CNY5.540 (CNY6.2602) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY762.00 (CNY861.06 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSISF20DN-T1-GE3
Order Code3050578RL
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id52A
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)0.01ohm
Continuous Drain Current Id N Channel52A
Continuous Drain Current Id P Channel52A
Drain Source On State Resistance N Channel0.01ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.01ohm
Gate Source Threshold Voltage Max3V
Transistor Case StylePowerPAK 1212
Power Dissipation Pd69.4W
No. of Pins8Pins
Power Dissipation N Channel69.4W
Power Dissipation P Channel69.4W
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
Automotive Qualification Standard-
SVHCLead (07-Nov-2024)
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
52A
On Resistance Rds(on)
0.01ohm
Continuous Drain Current Id P Channel
52A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.01ohm
Transistor Case Style
PowerPAK 1212
No. of Pins
8Pins
Power Dissipation P Channel
69.4W
Product Range
TrenchFET Gen IV Series
Automotive Qualification Standard
-
SVHC
Lead (07-Nov-2024)
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
52A
Drain Source On State Resistance N Channel
0.01ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
69.4W
Power Dissipation N Channel
69.4W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0011