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SISS5623DN-T1-GE3
Power MOSFET, P Channel, 60 V, 36.3 A, 0.024 ohm, PowerPAK 1212-8S, Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY8.230 (CNY9.2999) |
| 500+ | CNY6.550 (CNY7.4015) |
| 1000+ | CNY5.280 (CNY5.9664) |
| 5000+ | CNY5.230 (CNY5.9099) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY823.00 (CNY929.99 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS5623DN-T1-GE3
Order Code4199572RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id36.3A
Drain Source On State Resistance0.024ohm
Transistor Case StylePowerPAK 1212-8S
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.6V
Power Dissipation56.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
36.3A
Transistor Case Style
PowerPAK 1212-8S
Rds(on) Test Voltage
10V
Power Dissipation
56.8W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.024ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.6V
No. of Pins
8Pins
Product Range
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000074