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SISS588DN-T1-GE3
Power MOSFET, N Channel, 80 V, 58.1 A, 0.008 ohm, PowerPAK 1212-8S, Surface Mount
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4,900 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY8.810 (CNY9.9553) |
| 10+ | CNY7.220 (CNY8.1586) |
| 100+ | CNY5.630 (CNY6.3619) |
| 500+ | CNY4.760 (CNY5.3788) |
| 1000+ | CNY3.930 (CNY4.4409) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY8.81 (CNY9.96 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS588DN-T1-GE3
Order Code3906514
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id58.1A
Drain Source On State Resistance0.008ohm
Transistor Case StylePowerPAK 1212-8S
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation56.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
58.1A
Transistor Case Style
PowerPAK 1212-8S
Rds(on) Test Voltage
10V
Power Dissipation
56.8W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.008ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001