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SIZ342ADT-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 33.4 A, 33.4 A, 7800 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSIZ342ADT-T1-GE3
Order Code3365523RL
Product RangeTrenchFET GEN IV Series
Technical Datasheet
3,808 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY3.390 (CNY3.8307) |
| 500+ | CNY2.650 (CNY2.9945) |
| 1000+ | CNY2.450 (CNY2.7685) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY339.00 (CNY383.07 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSIZ342ADT-T1-GE3
Order Code3365523RL
Product RangeTrenchFET GEN IV Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id33.4A
Continuous Drain Current Id N Channel33.4A
On Resistance Rds(on)0.0078ohm
Continuous Drain Current Id P Channel33.4A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel7800µohm
Drain Source On State Resistance P Channel7800µohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.4V
Transistor Case StylePowerPAIR
No. of Pins8Pins
Power Dissipation Pd16.7W
Power Dissipation N Channel16.7W
Power Dissipation P Channel16.7W
Operating Temperature Max150°C
Product RangeTrenchFET GEN IV Series
Qualification-
Automotive Qualification Standard-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
33.4A
Continuous Drain Current Id P Channel
33.4A
Drain Source On State Resistance N Channel
7800µohm
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAIR
Power Dissipation Pd
16.7W
Power Dissipation P Channel
16.7W
Product Range
TrenchFET GEN IV Series
Automotive Qualification Standard
-
SVHC
To Be Advised
Channel Type
N Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
33.4A
On Resistance Rds(on)
0.0078ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
7800µohm
Gate Source Threshold Voltage Max
2.4V
No. of Pins
8Pins
Power Dissipation N Channel
16.7W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001