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SQ4917CEY-T1_GE3
Dual MOSFET, P Channel, 60 V, 60 V, 8 A, 8 A, 0.0421 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQ4917CEY-T1_GE3
Order Code4077832RL
Product RangeTrenchFET Series
Technical Datasheet
2,319 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY5.800 (CNY6.554) |
| 500+ | CNY4.590 (CNY5.1867) |
| 1000+ | CNY4.430 (CNY5.0059) |
| 5000+ | CNY4.270 (CNY4.8251) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY580.00 (CNY655.40 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQ4917CEY-T1_GE3
Order Code4077832RL
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeP Channel
Transistor PolarityDual P Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id8A
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)0.0421ohm
Continuous Drain Current Id N Channel8A
Continuous Drain Current Id P Channel8A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0421ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.0421ohm
Gate Source Threshold Voltage Max2.5V
Transistor Case StyleSOIC
Power Dissipation Pd5W
No. of Pins8Pins
Power Dissipation N Channel5W
Power Dissipation P Channel5W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCLead (07-Nov-2024)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
8A
On Resistance Rds(on)
0.0421ohm
Continuous Drain Current Id P Channel
8A
Drain Source On State Resistance N Channel
0.0421ohm
Drain Source On State Resistance P Channel
0.0421ohm
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation P Channel
5W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
Transistor Polarity
Dual P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
8A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
5W
Power Dissipation N Channel
5W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
Lead (07-Nov-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000054