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SQJ184EP-T1_GE3
Power MOSFET, N Channel, 80 V, 118 A, 0.0075 ohm, PowerPAK SO-8L, Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY10.030 (CNY11.3339) |
| 10+ | CNY6.950 (CNY7.8535) |
| 100+ | CNY5.410 (CNY6.1133) |
| 500+ | CNY4.300 (CNY4.859) |
| 1000+ | CNY3.530 (CNY3.9889) |
| 5000+ | CNY3.500 (CNY3.955) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY10.03 (CNY11.33 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQJ184EP-T1_GE3
Order Code4006709
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id118A
Drain Source On State Resistance0.0075ohm
Transistor Case StylePowerPAK SO-8L
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation234W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
118A
Transistor Case Style
PowerPAK SO-8L
Rds(on) Test Voltage
10V
Power Dissipation
234W
Operating Temperature Max
175°C
Qualification
AEC-Q101
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0075ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.5V
No. of Pins
8Pins
Product Range
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001