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SQJ208EP-T1_GE3
Dual MOSFET, N Channel, 40 V, 40 V, 60 A, 60 A, 3200 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQJ208EP-T1_GE3
Order Code3104166RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 54 week(s)
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY6.930 (CNY7.8309) |
| 500+ | CNY5.870 (CNY6.6331) |
| 1000+ | CNY4.660 (CNY5.2658) |
| 5000+ | CNY4.500 (CNY5.085) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY693.00 (CNY783.09 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQJ208EP-T1_GE3
Order Code3104166RL
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds40V
Drain Source Voltage Vds N Channel40V
Continuous Drain Current Id60A
Drain Source Voltage Vds P Channel40V
On Resistance Rds(on)0.0032ohm
Continuous Drain Current Id N Channel60A
Continuous Drain Current Id P Channel60A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel3200µohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel3200µohm
Gate Source Threshold Voltage Max1.9V
Transistor Case StylePowerPAK SO
No. of Pins8Pins
Power Dissipation Pd48W
Power Dissipation N Channel48W
Power Dissipation P Channel48W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHC0
Product Overview
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
40V
Continuous Drain Current Id
60A
On Resistance Rds(on)
0.0032ohm
Continuous Drain Current Id P Channel
60A
Drain Source On State Resistance N Channel
3200µohm
Drain Source On State Resistance P Channel
3200µohm
Transistor Case Style
PowerPAK SO
Power Dissipation Pd
48W
Power Dissipation P Channel
48W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
SVHC
0
Channel Type
N Channel
Drain Source Voltage Vds N Channel
40V
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id N Channel
60A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.9V
No. of Pins
8Pins
Power Dissipation N Channel
48W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:0
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.009