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SQJ560EP-T1_GE3
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 30 A, 30 A, 0.0099 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQJ560EP-T1_GE3
Order Code3019154RL
Product RangeTrenchFET Series
Technical Datasheet
4,348 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY6.550 (CNY7.4015) |
| 500+ | CNY5.550 (CNY6.2715) |
| 1000+ | CNY4.350 (CNY4.9155) |
| 5000+ | CNY4.010 (CNY4.5313) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY655.00 (CNY740.15 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSQJ560EP-T1_GE3
Order Code3019154RL
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id30A
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)0.0099ohm
Continuous Drain Current Id N Channel30A
Continuous Drain Current Id P Channel30A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0099ohm
Drain Source On State Resistance P Channel0.0099ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Transistor Case StylePowerPAK SO
Power Dissipation Pd34W
No. of Pins8Pins
Power Dissipation N Channel34W
Power Dissipation P Channel34W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHC0
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
30A
On Resistance Rds(on)
0.0099ohm
Continuous Drain Current Id P Channel
30A
Drain Source On State Resistance N Channel
0.0099ohm
Rds(on) Test Voltage
10V
Transistor Case Style
PowerPAK SO
No. of Pins
8Pins
Power Dissipation P Channel
34W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
SVHC
0
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
30A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.0099ohm
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
34W
Power Dissipation N Channel
34W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:0
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001