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SQJB00EP-T1_GE3
Dual MOSFET, N Channel, 60 V, 60 V, 30 A, 30 A, 0.0105 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQJB00EP-T1_GE3
Order Code3772874RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
2,375 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY6.050 (CNY6.8365) |
| 500+ | CNY4.780 (CNY5.4014) |
| 1000+ | CNY3.860 (CNY4.3618) |
| 5000+ | CNY3.840 (CNY4.3392) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY605.00 (CNY683.65 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQJB00EP-T1_GE3
Order Code3772874RL
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id30A
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)0.0105ohm
Continuous Drain Current Id N Channel30A
Continuous Drain Current Id P Channel30A
Drain Source On State Resistance N Channel0.0105ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.0105ohm
Rds(on) Test Voltage10V
Transistor Case StylePowerPAK SO
Gate Source Threshold Voltage Max3V
Power Dissipation Pd48W
No. of Pins4Pins
Power Dissipation N Channel48W
Power Dissipation P Channel48W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
30A
On Resistance Rds(on)
0.0105ohm
Continuous Drain Current Id P Channel
30A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
4Pins
Power Dissipation P Channel
48W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
30A
Drain Source On State Resistance N Channel
0.0105ohm
Drain Source On State Resistance P Channel
0.0105ohm
Transistor Case Style
PowerPAK SO
Power Dissipation Pd
48W
Power Dissipation N Channel
48W
Operating Temperature Max
175°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001