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SQJQ980EL-T1_GE3
Dual MOSFET, N Channel, 80 V, 80 V, 36 A, 36 A, 3600 µohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQJQ980EL-T1_GE3
Order Code3470683RL
Product RangeTrenchFET Series
Your Part Number
Technical Datasheet
684 In Stock
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684 Next business day delivery available(Shanghai stock)
| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY11.960 (CNY13.5148) |
| 500+ | CNY10.290 (CNY11.6277) |
| 1000+ | CNY10.090 (CNY11.4017) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY1,196.00 (CNY1,351.48 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQJQ980EL-T1_GE3
Order Code3470683RL
Product RangeTrenchFET Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel80V
Drain Source Voltage Vds80V
Drain Source Voltage Vds P Channel80V
Continuous Drain Current Id36A
Continuous Drain Current Id N Channel36A
On Resistance Rds(on)0.0036ohm
Continuous Drain Current Id P Channel36A
Drain Source On State Resistance N Channel3600µohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel3600µohm
Rds(on) Test Voltage10V
Transistor Case StylePowerPAK
Gate Source Threshold Voltage Max2V
No. of Pins8Pins
Power Dissipation Pd187W
Power Dissipation N Channel187W
Power Dissipation P Channel187W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
80V
Drain Source Voltage Vds P Channel
80V
Continuous Drain Current Id N Channel
36A
Continuous Drain Current Id P Channel
36A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
187W
Power Dissipation P Channel
187W
Product Range
TrenchFET Series
Automotive Qualification Standard
AEC-Q101
Channel Type
N Channel
Drain Source Voltage Vds
80V
Continuous Drain Current Id
36A
On Resistance Rds(on)
0.0036ohm
Drain Source On State Resistance N Channel
3600µohm
Drain Source On State Resistance P Channel
3600µohm
Transistor Case Style
PowerPAK
No. of Pins
8Pins
Power Dissipation N Channel
187W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00018