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Quantity | Price (inc GST) |
---|---|
5+ | CNY15.430 (CNY17.4359) |
50+ | CNY13.380 (CNY15.1194) |
100+ | CNY11.320 (CNY12.7916) |
500+ | CNY9.180 (CNY10.3734) |
1000+ | CNY8.590 (CNY9.7067) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
CNY77.15 (CNY87.18 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSUD50P06-15-GE3
Order Code2396089
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id50A
Drain Source On State Resistance0.012ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (07-Nov-2024)
Product Overview
The SUD50P06-15-GE3 is a 60V P-channel TrenchFET® Power MOSFET with power dissipation at 2.5W. This power MOSFET is designed for load switch.
- ±20V Gate-source voltage
Applications
Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
50A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.012ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000521