VSMY2850RG
Infrared Emitter, High Speed, 850 nm, 10 °, SMD, 10 mW/Sr, 10 ns, 10 ns
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY5.620 (CNY6.3506) |
| 10+ | CNY3.920 (CNY4.4296) |
| 25+ | CNY3.780 (CNY4.2714) |
| 50+ | CNY3.640 (CNY4.1132) |
| 100+ | CNY3.500 (CNY3.955) |
| 500+ | CNY2.940 (CNY3.3222) |
Product Information
Product Overview
The VSMY2850RG is a 850nm Infrared Emitting Diode based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, moulded in clear. It is suitable for high pulse current operation and floor life of 4 weeks, MSL 2a, according to J-STD-020. It is suitable for use in IrDA compatible data transmission, miniature light barrier, photointerrupters, optical switch, emitter source for proximity sensors, IR touch panels and IR illumination.
- High reliability
- High radiant power
- High radiant intensity
- Terminal configurations - Gull-wing or reserve gull-wing
- ±10° Angle of half intensity
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
850nm
SMD
10ns
100mA
-40°C
-
MSL 2A - 4 weeks
10°
10mW/Sr
10ns
1.9V
85°C
-
No SVHC (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate