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CAS350M12BM3
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 417 A, 1.2 kV, 0.004 ohm, Module
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY7,000.350 (CNY7,910.3955) |
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CNY7,000.35 (CNY7,910.40 inc GST)
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Product Information
ManufacturerWOLFSPEED
Manufacturer Part NoCAS350M12BM3
Order Code4258107
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id417A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.004ohm
No. of Pins-
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max3.6V
Power Dissipation-
Operating Temperature Max150°C
Product Range-
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
417A
Drain Source On State Resistance
0.004ohm
Rds(on) Test Voltage
15V
Power Dissipation
-
Product Range
-
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
No. of Pins
-
Gate Source Threshold Voltage Max
3.6V
Operating Temperature Max
150°C
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
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Product Compliance Certificate
Weight (kg):.345637