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XP3N9R5AH
Power MOSFET, N Channel, 30 V, 38.5 A, 0.0095 ohm, TO-252, Surface Mount
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ManufacturerYAGEO XSEMI
Manufacturer Part NoXP3N9R5AH
Order Code4168943
Product RangeXP3N9R5A Series
Technical Datasheet
2,980 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY10.540 (CNY11.9102) |
| 10+ | CNY8.300 (CNY9.379) |
| 100+ | CNY5.500 (CNY6.215) |
| 500+ | CNY4.410 (CNY4.9833) |
| 1000+ | CNY4.030 (CNY4.5539) |
| 5000+ | CNY3.660 (CNY4.1358) |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
CNY10.54 (CNY11.91 inc GST)
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Product Information
ManufacturerYAGEO XSEMI
Manufacturer Part NoXP3N9R5AH
Order Code4168943
Product RangeXP3N9R5A Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id38.5A
Drain Source On State Resistance0.0095ohm
Transistor Case StyleTO-252
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation2W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeXP3N9R5A Series
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
38.5A
Transistor Case Style
TO-252
Rds(on) Test Voltage
10V
Power Dissipation
2W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0095ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
XP3N9R5A Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001