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XP3P020M
Power MOSFET, P Channel, 30 V, 9.3 A, 0.02 ohm, SOIC, Surface Mount
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ManufacturerYAGEO XSEMI
Manufacturer Part NoXP3P020M
Order Code4168954
Product RangeXP3P020 Series
Technical Datasheet
2,395 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY3.830 (CNY4.3279) |
| 10+ | CNY3.110 (CNY3.5143) |
| 100+ | CNY2.130 (CNY2.4069) |
| 500+ | CNY1.620 (CNY1.8306) |
| 1000+ | CNY1.100 (CNY1.243) |
| 5000+ | CNY0.914 (CNY1.0328) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
CNY19.15 (CNY21.64 inc GST)
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Product Information
ManufacturerYAGEO XSEMI
Manufacturer Part NoXP3P020M
Order Code4168954
Product RangeXP3P020 Series
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id9.3A
Drain Source On State Resistance0.02ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeXP3P020 Series
Qualification-
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
9.3A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.02ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
XP3P020 Series
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001